董志华

博士高级工程师 | 硕士生导师学科：电子科学与技术职务：

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2000年7月和2005年7月分别在山东大学和山东师范大学获得工学学士（微电子技术）和工学硕士学位（固体电子学与微电子学）。于2011年1月在北京大学获得理学博士学位（固体电子学与微电子学），现为IEEE Member。主要从事微纳器件及电路研究。2013年自中国科学院苏州纳米技术与纳米仿生研究所电子科学与技术专业博士后联合流动站出站。2017年12至2019年1月，作为国家公派访问学者赴美国马里兰大学访学，从事纳米材料及器件研究。2014年进入bob电竞ios ，从事宽禁带半导体器件及电路、新型微纳米器件的研究。

Google scholar H因子14，在国内外刊物上发表项目论文50余篇，获得授权中国发明专利14项，美国专利2项。作为项目负责人，完成国家自然科学基金青年科学基金项目1项。曾参与多项国家自然科学基金面上项目及浙江省自然科学基金重点项目等。

2005/09 - 2011/01，北京大学，微电子研究所，博士

2002/09 - 2005/07，山东师范大学，物理与电子学院，硕士

1996/09 - 2000/07，山东大学（千佛山校区），电子工程系，学士

(1) 2014/06-至今，bob电竞ios ，电子信息学院，高级工程师

(2)2017.12-2019.1，马里兰大学帕克分校，材料科学与工程系，国家留学基金委公派访问学者

(3)2013/10- 2014/06，中科院苏州纳米所，高级工程师

(4)2011/03- 2013/10，中科院苏州纳米所，博士后

宽禁带半导体器件

纵向科研

主持项目

国家自然科学基金青年科学基金项目 GaN电力电子器件钝化关键技术研究

论文

1. Zhihua Dong, Leifeng Jiang, Manqi Su, Chunhong Zeng, Hui Liu, Botong Li, Yuhua Sun, Qi Cui, Zhongming Zeng, and Baoshun Zhang. The Effect of Diluted N₂O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor. Electronics 13, 2024 (3): 596.

2. Ying Ma, Liang Chen, Zhihua Dong, Yifang Hong, Yang Xiao, Yijie Xin, Bin Zhang, Hua Qin, Ting Zhang, Xiaodong Zhang, and et al. Current Drops in CF4 Plasma-Treated AlGaN/GaN Heterojunction in Polar Gas Ambient . Electronics, 2023, 12(8), pp.1809-1812.

3. Xi Chen, Tian-Song Deng, Ming Zhou, Zhihua Dong, and Zhiqun Cheng. Mixed-phase TiO2 with oxygen vacancies for enhanced visible light photocatalysis performance. Nano 2022,17 (3): 2250025.

4. Xiaodong Zhang, Xing Wei, Peipei Zhang, Hui Zhang, Li Zhang, Xuguang Deng, Yaming Fan, Guohao Yu, Zhihua Dong, Houqiang Fu, and et al. Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric. Electronics 2022. 11( 6): 895.

5. Zhili Zhang; Weiyi Li; Kai Fu; Guohao Yu; Xiaodong Zhang; Yanfei Zhao;Shichuang Sun; Liang Song; Xuguang Deng; Zheng Xing; Lei Yang; Rongkun Ji;Chunhong Zeng; Yaming Fan; Zhihua Dong; Yong Cai; Baoshun Zhang; AlGaN/GaN MIS-HEMTs of Very-low Vth Hysteresis & Current Collapse with In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator, IEEE Electron Device Letters, 2017, 38(2): 236-239.

6. Zhihua Dong, Ronghui Hao, Zhili Zhang，Yong Cai, Baoshun Zhang and Zhiqun Cheng ,IMPACT OF N^- PLASMA TREATMENT ON THE CURRENT COLLAPSE OF ALGAN/GAN HEMTS, 12^thInternational Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings,Guilin , 2014, pp.1020~1022

7. Zhihua Dong; Shuxin Tan; Yong Cai; Hongwei Chen; Shenghou Liu; Jicheng Xu; Lu Xue; Guohao Yu; Yue Wang; Desheng Zhao; KeyuHou; Chen, K.J.; Baoshun Zhang， 5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing，Electronics Letters 49 (2013),pp. 221-2

8. Yu, Guohao; Cai, Yong; Wang, Yue; Dong, Zhihua; Zeng, Chunhong; Zhao, Desheng; Qin, Hua; Zhang, Baoshun, 2013, A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance, IEEE Electron Device Letters, 34(6), pp 747-749 (SCI)

9. G. H. Yu, Y. Wang, Y. Cai, Z.H. Dong, C. H. Zeng, B. S. Zhang , “Dynamic Characterizations of AlGaN/GaN HEMTs with Field-plates using a Double-gate Structure”, IEEE Electron Device Letters34(2013), pp.217-9

10. Zhihua Dong, Jinyan Wang, C. P. Wen, Rumin Gong, ShenghouLiu,Min Yu, YilongHao,Fujun Xu, Bo Shen, Yangyuan Wang ,Hightemperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure, , Microelectronics reliability52 (2012), pp. 434-438

11. Zhihua Dong , Jinyan Wang, C.P. Wen, Danian Gong , Ying Li, Min Yu , YilongHao , Fujun Xu ,Bo Shen , Yangyuan Wang, High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Tias gate insulator, Solid-State Electron54 (2010), pp. 1339–42

12. Zhihua Dong, Jinyan Wang, Rumin Gong, Shenghou Liu, C. P. Wen, Min Yu, FujunXu,YilongHao, Bo Shen, Yangyuan Wang,Multiple Ti/Al stacks induced thermal stability enhancement inTi/Al/Ni/Au Ohmic contact on AlGaN/GaN heterostructure,10^thInternational Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings, pp. 1359-1361,Shanghai , 2010

13. Rumin Gong, Jinyan Wang, Zhihua Dong, Shenghou Liu, Min Yu, Cheng P. Wen, YilongHao, Bo Shen, Yong Cai, Baoshun Zhang, Jincheng Zhang, Analysis on the new mechanisms of low-resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs, Journal of Physics D: Applied Physics, 43(2010), pp.395102

14. Rumin Gong, Jinyan Wang, Shenghou Liu, Zhihua Dong, Min Yu, Cheng P. Wen, Yong Cai, Baoshun Zhang, Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN High Electron Mobility Transistors (HEMTs), Applied Physics Letter97(2010) 062115

15. Rumin Gong, Jinyan Wang, Shenghou Liu, Zhihua Dong, Cheng. P. Wen, Min Yu, Yong Cai, Baoshun Zhang, AlGaN/GaN dual gate MOS HFET for power device applications, 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings, pp1353-1355, Shanghai, 2010

16. Shenghou Liu, Jinyan Wang, Rumin Gong, Zhihua Dong, Min Yu, C. P. Wen,Chunhong Zeng, Yong Cai, Baoshun Zhang，Enhanced Device Performance of AlGaN/GaN MOSHEMT with ThermalOxidation，2010 International Conference on Solid State Devices and Materials, Tokyo, 2010, pp. 371-372

17. .董志华，王金延，郝一龙，文正，王阳元,热氧化电子束蒸发Ti膜制备TiO2-AlGaN/GaN MIS结构的工艺及泄漏电流特性研究,半导体技术（增刊）,33(2008)pp. 87-90

18. Chuan Xu, Jinyan Wang, Hongwei Chen, Fujun Xu, Zhihua Dong,YilongHao, and Cheng P. Wen，The Leakage Current of the Schottky Contact on theMesa Edge of AlGaN/GaNHeterostructure，IEEE ELECTRON DEVICE LETTERS, 28（2007）, pp.942-944

19. Zhihua DONG, Chengshan UE, Huizhao ZHUANG, Haiyong GAO, Deheng TIAN, Yuxin WU, Synthesis of GaN films on porous silicon substrates, Rare Metals,25(2006), pp. 96–98

20. Zhihua Dong; ChengshanXue; Huizhao Zhuang; Shuyun Wang; Haiyong Gao; Deheng Tian; Yuxin Wu; Jianting He; Yi'an Liu，Synthesis of three kinds of GaN nanowires through Ga₂O₃ films' reaction with ammonia，Physica E,27(2005),pp.32-7.

著作

1.《通信电子线路》，西安电子科技大学出版社，2019，程知群,陈瑾,林弥,周涛,刘国华,董志华,柯华杰

2. 《Communication Electronic Circuits》，科学出版社，2020，程知群,刘国华,柯华杰,林弥,陈瑾,董志华,周涛

中国专利：

1. 氮化镓基器件的欧姆接触及其制备方法, 董志华，王金延，郝一龙，文正，王阳元, 专利号：200810212053.4

2. 董志华，蔡勇，于国浩，张宝顺，具有背面场板结构的MIS-HEMT器件及其制备方法，专利申请号 201410008434.6

3. 董志华等，具有背面场板结构的HEMT器件及其制备方法，专利申请号 201410008455.8 董志华等，具有背面场板结构的增强型MIS-HEMT器件及其制备方法，专利申请号 201410008777.2

4. 董志华等，具有背面场板结构的增强型HEMT器件及其制备方法，专利申请号 201410007469.8

5. 一种利用全固态电池实现的增强型III-VHEMT器件，董志华,张辉,张佩佩,程知群,刘国华,李仕琦,蒋俊杰，专利号: ZL 201810405244.6

6. 一种利用全固态电池实现增强型III-VHEMT器件的方法, 董志华,张佩佩,张辉,程知群,李仕琦,刘国华,蒋俊杰,专利号：ZL201810405243.1

7. 一种利用细菌纤维素水凝胶制备锂硫电池正极材料的方法，董志华,蒋俊杰,李仕琦,王育天,程知群，专利号：ZL201910161846.6

8. 一种具有温差发电机构的III-VHEMT器件的制备方法, 董志华,蒋俊杰,刘国华,李仕琦,刘杰,程知群, 专利号：ZL 201810689962.0

9. 董志华,蒋俊杰,刘国华,李仕琦,刘杰,程知群,一种具有温差发电机构的III-VHEMT器件,专利号：ZL 2018100688668.8，2018年06月28日；授权公告日：2021年06月15日

10. 董志华,周明,李仕琦, 邓天松，刘国华,程知群,基于III-V族半导体高电子迁移率晶体管的日盲紫外探测器及其制作方法，专利号：ZL 201911259202.7，2019年12月10日；授权公告日：2021年09月21日

11. 董志华，周明，刘辉，王育天，李仕琦，刘国华，程知群,基于Ga₂O₃/TiO₂复合悬浮栅的异质结场效应管及其制备方法和紫外探测器件，专利号：ZL 202010126020.9，2020年2月27日；授权公告日：2022年08月26日

12. 基于Ga₂O₃/CuI异质PN结的日光盲紫外探测器，董志华，周明，曾春红，林文魁，王育天，刘辉，李仕琦，刘国华，程知群,专利号：ZL 202010216434.0

美国专利：

1. III-V Heterojunction Field Effect Transistor, Zhihua Dong, Zhiqun Cheng, Guohua Liu, Huajie Ke，US Patent. US10283598B2

2. Group III nitride high electron mobility transistor (HEMT) device, Yong Cai, Guohao Yu, Zhihua Dong,Baoshun Zhang, US Patent. US9070756B2

3. ENHANCEMENT-MODE III-V HEMT BASED ON ALL-SOLID-STATE BATTERY, Zhihua Dong, Zhiqun Cheng,Shiqi Li，Guohua Liu, Huiliu，Jian Li，US Patent. US11398566B2

教职工个人主页

董志华