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罗将职称: 副教授 毕业院校:武汉大学 邮件: luojiang@hdu.edu.cn 办公地点: 第2教研楼中425室 职务: 研究方向: 集成电路芯片设计与应用;信号处理与分析 |
个人概况 研究领域 教学与课程 科研项目 科技成果 论文与著作 荣誉及奖励 |
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罗将职称: 副教授 毕业院校:武汉大学 邮件: luojiang@hdu.edu.cn 办公地点: 第2教研楼中425室 职务: 研究方向: 集成电路芯片设计与应用;信号处理与分析 |
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个人简介: 罗将,博士、副教授/副研究员、博士生导师,新加坡南洋理工大学访问学者、全国超材料大会优秀青年学者,电子元器件关键材料与技术专业委员会委员、中国通信学会高级会员,现任电子信息学院(集成电路科学与工程学院)院长助理、集成电路设计与集成系统系主任。 2018年6月毕业于武汉大学,曾赴新加坡南洋理工大学(2016.03-2017.09)交流访问,2018年7月至2021月8月任职于中国电科第**研究所,2021年9月加入bob电竞ios 。长期致力于面向5G毫米波通信、卫星通信、相控阵雷达、高速光通信以及智能超表面(RIS)等应用的硅基(CMOS、SiGe BiCMOS)/化合物(CaAs、InP、GaN)基集成电路与系统芯片的教学与研究工作,包括RIS有源调控器件与芯片、前端单功能芯片(放大器:PA/LNA/DA/VGA/AGC/TIA、开关、移相器、衰减器、频率源VCO/PLL、混频器、电源LDO、运放等)、幅相多功能芯片、变频多功能芯片、三维异构多功能芯片和超高速光接收机芯片,以及基于物理机理的微弱信号智能化处理与分析。 近年来,主持并参与了包括**预研、**型谱、**新品、工信部03专项、国家重点研发计划、国家自然科学基金等在内的10余个国家纵向芯片项目的研制工作,以及多项企事业单位科技攻关项目的芯片开发工作,取得了一些创新性的成果,相关芯片在**装备和产品上得到批量应用。在本领域高水平学术期刊和国际会议上发表学术论文60余篇,授权专利多项。 研究领域: (1)混合/模拟/微波/毫米波集成电路芯片与应用 (2)电磁调控芯片设计与应用 (3)AI辅助信号处理与分析 育人成效: 指导研究生入选浙江省专硕优秀实践成果奖、研究生电子设计竞赛一等奖、本科生集创赛二等奖、优秀指导教师等荣誉,指导多名本科生发表SCI/EI学术论文。毕业学生入职国基南方(中国电科55所,RFIC领域一流国家队)、小米科技、中国电科产业基础研究院等单位工作,或前往浙江大学、东南大学、华南理工大学、上海科技大学、加州大学(美国)等国内外高校深造。
招生意向: 课题组和东南大学、中科院、中国电科、航天科工等单位有深入地合作,有充足的流片机会,支持对外交流。每年招录研究生4名左右,欢迎对集成电路设计、RIS新体制相控阵、AI辅助信号处理等方向感兴趣的学生与我联系,请附简历(注明报考专业、考研各科成绩)、本科成绩单及其它相关材料(如竞赛、学术成绩、英语四六级等)。 教育经历
工作经历
社会职务
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研究领域
1. 混合/模拟/微波/毫米波集成电路芯片与应用 2. 电磁调控芯片设计与应用 3. AI辅助信号处理与分析 |
教学与课程
授课信息: 1. 线性电子电路/A0402080(春季/自动化专业),3学分/48学时 2. 智能信息获取技术/A0404540(秋季/智能硬件与系统专业),3学分/48学时 3. 智能芯片原理与应用/B0401440(秋季/集成电路与系统专业),3学分/48学时 4. 创新实践1-4/S0418051-4(春季/秋季/智能硬件与系统专业),2学分/32学时 5. 无线通信基础/Z104040(春季/研究生学位课),3学分/48学时 |
横向科研
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纵向科研
R05. 基于信息超构材料的无线通信中继器件及系统 (2023.11-2026.10) 国家重点研发计划(批准编号:2023YFB3811500), 子课题负责人 R04. 面向数据中心通信应用的400Gb/s光接收机芯片关键技术研究 (2023.01-2025.12) 浙江省自然科学基金(批准编号:LQ23F040009), 项目负责人
R03. 硅基太赫兹低噪声放大器关键技术研究 (2023.01-2024.12) 毫米波全国重点实验室开放基金[一般类](批准编号:K202316), 项目负责人 R02. 三维异构Ka卫星通信组件芯片关键技术研究 (2021.06-2024.06) 江苏省重点研发计划(批准编号:BE2021017), 项目负责人 R01. 面向数据中心通信应用的硅基超高速TIA芯片设计研究 (2022.01-2023.12) 省属高校基本科研业务费(批准编号:GK229909299001-309), 项目负责人
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专利成果
国家发明专利 P01. 罗将,沈宏昌.一种接地耦合式混合耦合器及毫米波超宽带单刀单掷开关; 专利号[授权]:ZL201910095247.9 P02. 罗将.一种面向大阵列毫米波系统应用的表面波隔离器; 专利号[授权]:ZL201910490313.2 P03. 罗将,张文柱,赵镇鑫,刘军.一种超宽带交叉耦合器及毫米波低损耗衰减器; 专利号[授权]: ZL202310235677.2 P04. 罗将,章理程.一种基于MOS开关芯片调控的可重构超表面反射阵及其实现方法; 专利号[授权]:ZL202510006044.3 P05. 罗将,赵镇鑫,张智,刘军.一种适用于片上电源滤波的高密度电容及其实现方法; 专利号[授权]:ZL202310305567.9 P06. 罗将,张洪运,刘军.一种基于宽带耦合器结构的宽带高精度 180°移相器; 专利号[授权]:ZL202310305567.9 P07. 罗将,董鉴霈,赵伟,钟意.一种基于有源电阻器的无电感数控衰减器; 专利号[受理]:CN202510252332.7 |
软件成果
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论文
部分期刊论文(*表示通讯作者) J27. Q. Y. Zhou, L. Wu, H. D. Li, J. C. Wang, S. Wang, J. Luo, S. Liu, J. Ma, J. Y. Dai, Q. Cheng, and T. J. Cui. Decoupling Strategy of Metasurface to Realize Independent Sensing and Wave Manipulations at the Same Time. Advanced Materials, 2025, 2500266. DOI:10.1002/adma.202500266. J26. L. C. Zhang, J. Luo*, X. J. Fu, Y. Fu, L. F. Chen, Y. J. Liu, H. D. Li, J. Y. Dai, and Q. Chneg*. CMOS-Enabled Energy-Efficient Reconfigurable Intelligent Surfaces for Next-Generation Wireless Communications. IEEE Antennas and Wireless Propagation Letters. DOI: 10.1109/LAWP.2025.3557005. J25. J. Luo, Y. Peng, and Q. Chneg*. A 10 to 15 GHz Digital Step Attenuator with Robust Temperature Tolerance Across −55 ℃ to 125 ℃. IEEE Transactions on Circuits and Systems II: Express Briefs,vol. 72, no. 5, pp. 653-657, May 2025. DOI: 10.1109/TCSII.2025.3546292. J24.卢颖娟,程强,王思然,李会东,戴俊彦,张珍,罗将.用于波束重构和雷达截面缩减的超宽带可重构智能超表面设计(特邀).光学学报,卷: 2,期: 4,页码: 0401001(1-9),2025年1月。 J23. Y. Liu, Y. Wang, X. J. Fu*, J. Luo, Z. Zhu, H. Xu, P. Wang, Y. Fu, L. Cao, Y. Xu, and T. J. Cui*. Ultra‐Wideband Simultaneous Manipulations of Fundamental and Harmonic Waves Based on Space‐Time Coding Metasurface: Basic Principles and mmWave Applications. Laser & Photonics Reviews, 2401482, Jan. 2025. J22. Z. Zhang, J. W. Zhang, Y. J. Lu, H. D. Li, J. Luo, J. W. Wu,and Q. Cheng*. A Novel Design Approach Using Zero-Pole-Based Multi-Port Model for Reconfigurable Intelligent Surfaces. IEEE Transactions on Antennas and Propagation, vol. 72, no. 11, pp. 8564 - 8574, Nov. 2024. J21. J. Luo, Z.Y. Li, Y. Peng*, and Q. Cheng*. A V-Band High-Linearity BiCMOS Mixer with Robust Temperature Tolerance. Frontiers of Information Technology & Electronic Engineering, vol.25, no.11, pp.1565-1574, Dec. 2024. J20. Y. Shen, J. Luo*, W. Zhao, J. Y. Dai, and Q. Cheng*. A Compact V-Band Temperature Compensation Low-Noise Amplifier in a 130 nm SiGe BiCMOS Process. Micromachines, vol.15, no.10, pp.1248, Oct. 2024. J19. J. Luo*, W. Z. Zhang, and Q. Cheng. Design of 95~105 GHz SiGe BiCMOS Wideband Digitally Controlled Attenuator for Metasurface Antenna. Journal of Electronics & Information Technology, 2025, 47(2): 344-352. doi: 10.11999/JEIT240059。 J18. J. Hu, J. Wan, Y. Shen, W. Zhao, and J. Luo*. A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process. Micromachines, vol.15, no.9, pp.1077, Aug. 2024. J17. Y. C. Zhou, S. Wang, J. Y. Dai, J. Luo*, Q. Cheng*. Design of A Compact 2–6 GHz High-Efficiency and High-Gain GaN Power Amplifier. Micromachines, vol.15, no.5, pp.601, Apr. 2024. J16. J. Luo*, Y. Shen, and Q. Cheng. A 18-33 GHz CMOS LNA with 26.7 dB Peak Gain and 2.8 dB Minimum NF for K/Ka-band Applications. AEU-International Journal of Electronics and Communications, vol.177, pp.155175, Feb. 2024. J15. Z. X. Zhao, J. Luo*, J. Liu, L. H. Zhang. Signal-Division-Aware Analog Circuit Topology Synthesis Aided by Transfer Learning. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol.42, no.11, pp. 3481-3490, Nov. 2023. J14. F. W. Li, Y. -F. Cheng, G. F. Wang, J. Luo. A Novel High-Isolation Dual-Polarized Patch Antenna with Two In-Band Transmission Zeros. Micromachines, vol.14, no.9, pp.1784, Sep. 2023. J13. Y. J. Liu, Y. Wang, X. J. Fu*, L. Shi, F. Yang, J. Luo, Q. Y. Zhou, Y. Fu, Q. Chen, J. Y. Dai, L. Zhang, Q. Cheng, T. J. Cui*. Toward Sub-Terahertz: Space-Time Coding Metasurface Transmitter for Wideband Wireless Communications. Advance Science, vol.10, no.29, pp.2304278, Aug. 2023. J12. Y. Y. He, Y. -F. Cheng, J. Luo*. A Bandpass Filter Realized by Using Pixel Structure and Genetic Algorithm Optimization. Micromachines, vol.14, no.7, pp.1389, July 2023. J11. J. Luo*, P. W. Chen. A Compact 9-23 GHz Low Noise Amplifier with Bandwidth Extension Techniques in 0.18-μm SiGe BiCMOS. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol.37, no.2, pp. 1-12, June. 2023. J08. 罗将,何环环,王锋,等.8~14 GHz SiGe BiCMOS宽带功率放大器. 微电子学与计算机,卷: 38,期: 2,页码: 72-76,2021年3月。 J07. X. Quan, J. Luo*. A 27-33 GHz compact medium power amplifier with pole-tuning technique in 130 nm CMOS technology. Microwave and Optical Technology Letters, vol.17, no.12, pp.139-145, Jan. 2021. J06. J. R. Pan, J. Luo*, J. He, G. Y. Feng, A. Apriyana, Y. -P. Zhang. A D-Band CMOS Power Amplifier for Short-Distance Data Center Communication. IEICE Electronics Express, vol.17, no.12, pp.1-6, June 2020. J05. J. Luo, J. He, G. Y. Feng, et al. A D-Band Amplifier in 65 nm Bulk CMOS for Short-Distance Data Center Communication. IEEE ACCESS, vol. 6, no.1, pp.53191-53200, Sep. 2018. J04. J. Luo, J. He, H. Wang, et al. A 28 GHz LNA Using Defected Ground Structure for 5G Application. Microwave and Optical Technology Letters,vol. 60, no.5, pp.1067-1072, May. 2018. J03. J. Luo, J. He, P. W. Chen, et al. Micro-Strip Line 90° Phase Shifter with Double Ground Slots for D-Band Applications. Journal of Circuits, Systems, and Computers, vol. 27, no.12, pp.1850192:1-10, Feb. 2018. J02. J. Luo, J. He, A. Apriyana, et al. Tunable Surface-Plasmon-Polariton Filter Constructed by Corrugated Metallic Line and High Permittivity Material. IEEE ACCESS, vol. 6, no.1, pp.10358-10364, Jan. 2018. J01. J. Luo, J. He, A. Apriyana, et al. A D-band SPST switch using parallel-stripline swap with defected ground structure. IEICE Electronics Express, vol.14, no.24, pp.1-10, Dec. 2017. 部分会议论文(*表示通讯作者) C14. C. Y. Fu, Z. Y. Fei, J. Luo*, et al. A 1.2 V 250 mA Low-Dropout Voltage Regulator in 180nm Bulk CMOS Process. IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, Nanjing, China, Nov. 2024. (Invited Paper) C13. Y. Z. Li, J. Luo*, Y. Shen, et al. W-band CMOS ×8 Frequency Multiplier with High Harmonic Rejection. IEEE International Conference on Electronic Information and Communication Technology, Xian, China, Aug. 2024. C12. W. T. Bao, J. Luo*, Y. J. Jin, et al. A 2.5V 200mA CMOS Low-Dropout Voltage Regulator with Robust PVT. IEEE International Conference on Electronic Information and Communication Technology, Xian, China, Aug. 2024. C11. H. H. He, F. Wang, H. Y. Zhang, L. C. Zhang, J. K. Li, J. Luo*. A Digitally Controlled CMOS Vector-Sum Phase Shifter with Low RMS Phase Error for Ka-band Phased Arrays. Photonics and Electromagnetics Research Symposium, Chengdu, China, Apr. 2024. (Invited Paper) C10. J. P. Dong, W. Z. Zhang, J. Luo*,et al. A DC-20 GHz 5-bit CMOS Digital Step Attenuator for Phased-array Applications. Photonics and Electromagnetics Research Symposium, Chengdu, China, Apr. 2024. (Invited Paper) C09. L. C. Zhang, H. Y. Zhang, J. Luo*, et al. 35-39 GHz CMOS Phase Shifter with Capacitive Compensation for Phased-array Applications. IEEE International Conference on Microwave and Millimeter Wave Technology, Beijing, China, May 2024. C08. H. Y. Zhang, J. Luo*, P. W. Chen, et al. A Ka-Band 6-Bit Switched-Type CMOS Phase Shifter with Low RMS Amplitude Error. IEEE International Conference on Microwave and Millimeter Wave Technology, Qingdao, China, May 2023. C07. W. Z. Zhang, J. Luo*, P. W. Chen, et al. A Low-Loss and Wideband Quadrature Hybrid Coupler for Millimeter-Wave Attenuators. IEEE International Conference on Communications, Information System and Computer Engineering, Guangzhou, China, 2023. C06. J. Luo*, Q. F. Han, H. C. Shen, et al. A Broadband Single-Pole Single-Throw Switch with Ground-Slot Coupling Structure in 65 nm Bulk CMOS. IEEE International Conference on Microwave and Millimeter Wave Technology, Guangzhou, China, May 2019. C05. Q. F. Han, J. Luo*, H. C. Shen, et al. A 2-6 GHz Fully Integrated Switched Filter Bank for Multiband Wireless Communication Applications. IEEE International Conference on Microwave and Millimeter Wave Technology, Guangzhou, China, 2019. C04. J. Luo, J. He, G. Y. Feng, et al. A Broadband CMOS Amplifier in D band using Pole-tuning Technique with T-type Network. IEEE International Wireless Symposium, Chengdu, China, 2018. C03. J. Luo, A. Apriyana, G. Y. Feng, et al. A Sub-Terahertz Multi-Pixel Imaging System with Surface Wave Resonator for Isolation. IEEE Asia Pacific Microwave Conference, Kuala Lumpur, Malaysia, Nov. 2017. C02. J. Luo, J. He, H. Wang, et al. A 150-GHz Push-Push VCO in 0.13-µm SiGe BiCMOS. IEEE International Symposium on Integrated Circuits, Singapore, Dec. 2014. C01. A. Apriyana, J. Luo, Q. Chenet al. A CMOS Sub-Terahertz Full-Duplex Phased Array Transceiver for Short-Distance Data Center Communication. IEEE International Symposium on Radio-Frequency Integration Technology, Seoul, Korea (South), 2017. |
著作
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荣誉及奖励
2025:第四届全国超材料大会优秀青年学者 2024:浙江省专业学位研究生优秀实践成果奖(1/2) 2024:浙江省优秀研究生教学案例奖(2/2) 2024:第十九届中国研究生电子设计竞赛华东赛区优秀指导教师奖 2024:第八届全国大学生集成电路创新创业大赛华东赛区优秀指导教师奖 2023:浙江省优秀研究生教学案例奖(1/2) |
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